Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-06-14
2009-02-03
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S185200, C365S229000, C365S210100, C365S210120, C365S185180, C315S287000, C323S276000
Reexamination Certificate
active
07486572
ABSTRACT:
A voltage regulator for a static random access memory operating either in a standby mode or a operation mode is provided. The voltage regulator includes a reference voltage generating circuit for generating a reference voltage, a first control circuit connected to the reference voltage generating circuit for providing power supply during the standby mode of the SRAM, and a second control circuit connected to the reference voltage generating circuit for providing power in response to an enabling signal during the operation mode of the SRAM.
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Luo Xiao
Syu Tsung-Lu
Brilliance Semiconductor Intl. Inc.
Phung Anh
Wang Li K.
Wang Law Firm, Inc.
Wendler Eric
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