Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2009-01-08
2010-12-28
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189050, C365S185230, C365S236000
Reexamination Certificate
active
07859917
ABSTRACT:
A voltage regulating method applied to a memory to regulate a word line voltage corresponding to a set of memory cells of the memory includes the following steps. Firstly, a first value, which is for indicating an amount of data having a specific data value in a set of written data, is counted, wherein the set of written data is written into the set of memory cells. Next, a second value, which is for indicating an amount of data having the specific data value in a set of read data, is counted, wherein the set of read data is obtained by reading the set of written data. Then, a regulating voltage is determined according to a difference between the first and second values. After that, the word line voltage is regulated to be a sum of the word line voltage and the regulating voltage.
REFERENCES:
patent: 6831858 (2004-12-01), Hirano et al.
patent: 2003/0151950 (2003-08-01), Tamada et al.
patent: 2009/0003058 (2009-01-01), Kang
patent: 2009/0129157 (2009-05-01), Honda et al.
patent: 2009/0212776 (2009-08-01), Kitagawa et al.
Chen Han-Sung
Liu Tseng-Yi
Dinh Son
Le Toan
Macronix International Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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