Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-07-25
2006-07-25
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189050, C365S189070, C365S227000
Reexamination Certificate
active
07082062
ABSTRACT:
When the output of a boosted voltage is started by a boosted voltage generation circuit, the voltage supplied to memory cells and level shift circuits side through a current mirror circuit is detected by a voltage divider circuit. Comparators compare the detected voltage with a reference voltage. Based on the result of comparison, FETs are brought into conduction as required. The rate of voltage rise provided by the current mirror circuit is thus controlled.
REFERENCES:
patent: 5373477 (1994-12-01), Sugibayashi
patent: 5663911 (1997-09-01), Kaneko
patent: 6266284 (2001-07-01), Kurihara et al.
patent: A-H05-292734 (1993-11-01), None
patent: A-2003-123495 (2003-04-01), None
Denso Corporation
Luu Pho M.
Nguyen Tuan T.
Posz Law Group , PLC
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