Static information storage and retrieval – Powering
Patent
1998-09-01
1999-08-31
Hoang, Huan
Static information storage and retrieval
Powering
36518909, 365149, G11C 700, G11C 1604
Patent
active
059462590
ABSTRACT:
A reduced threshold voltage (Vt) magnitude or depletion mode metal-oxide-semiconductor (MOS) capacitor capable of use in a charge pump circuit such as a substrate bias voltage generator in a dynamic random access memory (DRAM) integrated circuit. The Vt magnitude of a p-channel MOS field-effect transistor (FET) used as a capacitor is reduced by using the same ion-implantation step used to increase the Vt magnitude of an n-channel MOS FET. The Vt magnitude of an n-channel MOS FET used as a capacitor is reduced by using the same ion-implantation step used to increase the Vt magnitude of a p-channel MOS FET. By sufficiently reducing Vt magnitude, a depletion mode MOS capacitor is formed. Reduced Vt magnitude and depletion mode MOS capacitors increase the useful voltage range of the capacitor, optimizing operation at low supply voltages.
REFERENCES:
patent: 4161791 (1979-07-01), Leach
patent: 4249194 (1981-02-01), Rogers
patent: 4467450 (1984-08-01), Kuo
patent: 4667312 (1987-05-01), Doung et al.
patent: 5266821 (1993-11-01), Chern et al.
patent: 5665995 (1997-09-01), Hsue et al.
Streetman, B.G., "Solid State Electronic Devices", 3rd Edition, Prentice Hall Series in Solid State Physical Electronics, Nick Holonyak, Jr., Series Editor, (1990).
Ma Manny K. F.
Manning Troy A.
Hoang Huan
Micro)n Technology, Inc.
LandOfFree
Voltage generator methods and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Voltage generator methods and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Voltage generator methods and apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2427980