Voltage generation circuit for multivalued cell type mask ROM

Details Voltage generation circuit for multivalued cell type mask ROM Voltage generation circuit for multivalued cell type mask ROM

1997-11-17

2000-08-22

Nelms, David

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

36518909, 36523006, 36523008, G11C 1604

Patent

active

061082473

ABSTRACT:
A voltage generation circuit for a multivalued cell type mask ROM includes partial circuits of the same number as the row number of memory cell transistors. Each of the partial circuits includes a cell part circuit, which includes a memory cell transistor and a resistor, which is formed to have the same resistance as the resistance parasitically added to a source and a drain of a memory cell transistor. Each of the partial circuits is supplied with the same signal as the signal supplied to a corresponding word line, so that the partial circuit corresponding to the word line of a selected memory cell transistor is selected to generate a voltage interlocked with a variation in the threshold caused by a difference between the source potential and the substrate potential.

REFERENCES:
patent: 4912674 (1990-03-01), Matsumoto et al.
patent: 5278786 (1994-01-01), Kawauchi et al.
patent: 5559737 (1996-09-01), Tanaka et al.
patent: 5761149 (1998-06-01), Suzuki et al.
patent: 5838629 (1998-11-01), Kohno

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