Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-11-27
2008-09-23
Mai, Son L (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185230, C365S185280, C365S189090
Reexamination Certificate
active
07428170
ABSTRACT:
A voltage generation circuit of a flash memory device includes a high voltage generator, a word line voltage generator, and a column selection voltage switch. The high voltage generator is configured to increase an internal power voltage from a first voltage to a second voltage which is higher than the first voltage. The word line voltage regulator is configured to generate an incremental step pulse based on the internal power voltage, where the incremental step pulse is output as a word line program voltage before the internal power voltage reaches the second voltage. The column selection voltage switch is configured to output a column selection voltage for selecting a bit line based on the internal power voltage.
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Mai Son L
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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