Voltage generating circuit for semiconductor integrated circuit

Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36518909, 365205, G11C 700

Patent

active

060916486

ABSTRACT:
A semiconductor integrated circuit includes a node for the power supply voltage for array that is connected to a sense amplifier, a decoupling capacitance connected to the node for the power supply voltage for array, a voltage-down converter connected to the node for the power supply voltage for array and generating a largest voltage stored in a memory cell, and two voltage-down converters connected to the node for the power supply voltage for array and generating a voltage higher than the largest voltage, and boosts the voltage of the node for the power supply voltage for array to attain a voltage higher than the largest voltage in the stand-by state and activates the voltage-down converter generating the largest voltage in operation.

REFERENCES:
patent: 5337284 (1994-08-01), Cordoba et al.
patent: 5657290 (1997-08-01), Churcher
patent: 5708616 (1998-01-01), Choi
patent: 5943274 (1999-08-01), Roth et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Voltage generating circuit for semiconductor integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Voltage generating circuit for semiconductor integrated circuit , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Voltage generating circuit for semiconductor integrated circuit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2043758

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.