Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-12-28
2010-06-22
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189070, C365S189050, C326S030000, C326S033000
Reexamination Certificate
active
07742347
ABSTRACT:
A voltage generating circuit for a semiconductor memory apparatus according includes a data logic voltage generating unit that, when a data output unit outside a semiconductor memory apparatus outputs low-level data, generates an internal data logic voltage at the same potential level as the low-level data in response to an on-die termination signal. In addition, a reference voltage generating circuit for a semiconductor memory apparatus that uses the voltage generating circuit includes a reference voltage generating unit that can be configured to generate a reference voltage at an average potential level between a maximum potential and a minimum potential of input data.
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Kang Shin Deok
Lee Dong Uk
Baker & McKenzie LLP
Hynix / Semiconductor Inc.
Le Toan
Phung Anh
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