Voltage-driven thyristor

Details Voltage-driven thyristor Voltage-driven thyristor

1994-08-23

1995-10-10

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257151, 257138, 257147, H01L 2974, H01L 29743

Patent

active

054573297

ABSTRACT:
An n-buffer layer and an n.sup.- -base layer are formed on a p.sup.+ -anode layer. A p-base layer is formed on the n.sup.- -base layer. The p-base layer has a p-type impurity layer protruding into n.sup.- -base layer. An n-cathode layer, an n.sup.+ -cathode layer and a P+-impurity layer are formed on p-base layer. First trenches are formed through p.sup.+ -impurity later, n-cathode layer and p-base layer. On-gates are formed in the first trenches. Second trenches are formed through p.sup.+ -impurity layer and n-cathode layer with their bottom surfaces located in p-type impurity layer. Off-gates are formed in the second trenches. First and second trenches are preferably formed alternately. Thereby, a voltage-driven thyristor has improved turn-on and turn-off characteristics and a high reliability.

REFERENCES:
patent: 4760431 (1988-07-01), Nakagawa et al.
"Constant-Current Contour I'Lot For The Description Of Short-Channel Effects Of MOS Transistors", Choong-Ki Kim et al., IEEE Transactions on Electron Devices, D-33, No. 10, Oct. 1986.
"MOS-Controlled Thyristors--A New Class Of Power Devices", Victor Temple, IEEE Transactions on Electron Devices, vol. ED-33, No. 10, Oct. 1986.

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