Voltage-dividing resistor and semiconductor device having...

Details Voltage-dividing resistor and semiconductor device having... Voltage-dividing resistor and semiconductor device having...

2006-08-15

2006-08-15

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S499000, C257S528000, C257S536000, C257S537000, C257SE27009

Reexamination Certificate

active

07091577

ABSTRACT:
A voltage-dividing resistor enables a multi-step voltage division. The voltage-dividing resistor includes a polysilicon layer formed on a semiconductor substrate; a metal layer formed on a partial area of the polysilicon layer; an insulating interlayer covering the polysilicon layer and the metal layer; a first electrode for applying a first reference voltage to one end of the polysilicon layer; a second electrode for applying a second reference voltage to the other end of the polysilicon layer; a plurality of third electrodes provided between the first and second electrodes to contact the metal layer; and a plurality of fourth electrodes provided between the first and second electrodes to contact the polysilicon layer.

REFERENCES:
patent: 6031275 (2000-02-01), Kalnitsky et al.
patent: 6703680 (2004-03-01), Toyoshima

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