Voltage controlled static random access memory

Details Voltage controlled static random access memory Voltage controlled static random access memory

2008-04-01

2008-04-01

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S189070, C365S189090, C365S230060

Reexamination Certificate

active

11161742

ABSTRACT:
A static random access memory (SRAM) (200, 400) comprising a plurality of SRAM cells (204), a plurality of wordlines (WL0-WLN) and a voltage regulator (240, 240′, 300, 516) for driving the wordlines with a wordline voltage signal (VWLP). The wordline voltage signal is determined so as to reduce the likelihood of occurrence of read-disturbances and other memory instabilities. In one embodiment, the wordline voltage signal is determined as a function of the metastability voltage (VMETA) of the SRAM cells and an adjusted most positive down level voltage (VAMPDL) that is a function of a predetermined voltage margin (VM) and a most positive down level voltage (VMPDL) that corresponds to the read-disturb voltage of the SRAM cells.

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