Voltage controlled static random access memory

Details Voltage controlled static random access memory Voltage controlled static random access memory

2008-04-01

2008-04-01

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S189070, C365S189090, C365S230060

Reexamination Certificate

active

07352609

ABSTRACT:
A static random access memory (SRAM) (200, 400) comprising a plurality of SRAM cells (204), a plurality of wordlines (WL0-WLN) and a voltage regulator (240, 240′, 300, 516) for driving the wordlines with a wordline voltage signal (VWLP). The wordline voltage signal is determined so as to reduce the likelihood of occurrence of read-disturbances and other memory instabilities. In one embodiment, the wordline voltage signal is determined as a function of the metastability voltage (VMETA) of the SRAM cells and an adjusted most positive down level voltage (VAMPDL) that is a function of a predetermined voltage margin (VM) and a most positive down level voltage (VMPDL) that corresponds to the read-disturb voltage of the SRAM cells.

REFERENCES:
patent: 4563754 (1986-01-01), Aoyama et al.
patent: 5046052 (1991-09-01), Miyaji et al.
patent: 5453949 (1995-09-01), Wiedmann et al.
patent: 5642315 (1997-06-01), Yamaguchi
patent: 5726944 (1998-03-01), Pelley et al.
patent: 6144606 (2000-11-01), Pan
patent: 6212124 (2001-04-01), Noda
patent: 6344922 (2002-02-01), Grubb et al.
patent: 6434040 (2002-08-01), Kim et al.
patent: 6515893 (2003-02-01), Bhavnagarwala
patent: 6611451 (2003-08-01), Houston
patent: 6654277 (2003-11-01), Hsu et al.
patent: 6728130 (2004-04-01), Afghahi et al.
patent: 7088620 (2006-08-01), Kawai et al.
patent: 7120061 (2006-10-01), Daga
patent: 2004/0099885 (2004-05-01), Yeo et al.

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