Voltage-controlled semiconductor structure, resistor, and...

Details Voltage-controlled semiconductor structure, resistor, and... Voltage-controlled semiconductor structure, resistor, and...

2011-03-22

2011-03-22

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257SE29326

Reexamination Certificate

active

07911031

ABSTRACT:
Voltage-controlled semiconductor structures, voltage-controlled resistors, and manufacturing processes are provided. The semiconductor structure comprises a substrate, a first doped well, and a second doped well. The substrate is doped with a first type of ions. The first doped well is with a second type of ions and is formed in the substrate. The second doped well is with the second type of ions and is formed in the substrate. The first type of ions and the second type of ions are complementary. A resistor is formed between the first doped well and the second doped well. A resistivity of the resistor is controlled by a differential voltage. A resistivity of the resistor relates to a first depth of the first doped well, a second depth of the second doped well, and a distance between the first doped well and the second doped well. The resistivity of the resistor is higher than that of a well resistor formed in a single doped well with the second type of ions.

REFERENCES:
patent: 5260595 (1993-11-01), Hayama
patent: 6624737 (2003-09-01), Chang et al.
patent: 2005/0062586 (2005-03-01), Erickson et al.
patent: 2005/0121746 (2005-06-01), Erickson et al.
patent: 2006/0125015 (2006-06-01), Woo

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