Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-17
2009-12-01
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21382, C257SE29198, C257SE29197
Reexamination Certificate
active
07626232
ABSTRACT:
SiC-IGBTs, which have an inversion-type channel with high channel resistance and have high on-voltage due to an influence from the surface state of the interface between a gate insulating film and a base layer, are required to decrease the on-voltage.An embedded collector region is partially formed in a base layer which is formed on an emitter layer of a SiC semiconductor. A channel layer is formed on the base layer and the embedded collector region to constitute an accumulation-type channel. Consequently, at on time, holes are accumulated in the upper layer portion of the channel layer so that a low-resistant channel is formed. Current by the holes flows to the emitter layer through a channel from the collector region and becomes a base current for an npn transistor composed of the embedded collector region, the base region and the emitter region.
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English translation of the International Preliminary Report on Patentability mailed Oct. 5, 2006 in corresponding PCT Application No. PCT/ JP2005/004834.
International Search Report of PCT/JP2005/004834 mailed Jun. 28, 2005.
Ryu et al., “High-Power P-Channel UMOS IGBT'S in 6H-SiC for High Temperature Operation”, Materials Science Forum, vols. 338-342, pp. 1427-1430 (2000).
Asano Katsunori
Sugawara Yoshitaka
Nixon & Vanderhye P.C.
Patton Paul E
Smith Zandra
The Kansai Electric Power Co. Inc.
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