Voltage-controlled magnetization reversal writing type...

Details Voltage-controlled magnetization reversal writing type... Voltage-controlled magnetization reversal writing type...

2007-10-16

2007-10-16

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000

Reexamination Certificate

active

11303584

ABSTRACT:
A voltage-controlled magnetization reversal writing type Magnetic Random Access Memory (MRAM) device. The MRAM device includes electrically conductive base electrodes, a piezoelectric layer, an insulation layer, a free ferromagnetic layer, a nonmagnetic layer, a pinned ferromagnetic layer, an antiferromagnetic layer and two electrically conductive reading lines. The electrically conductive base electrodes are provided with two writing lines having positive and negative electrodes. The left and right surfaces of piezoelectric layer are disposed to abut the writing lines of the electrically conductive base electrodes, respectively. The insulation layer is disposed beneath the piezoelectric layer and is formed to separate the positive and negative electrodes. The free ferromagnetic layer is disposed on the insulation layer. The nonmagnetic layer is disposed on the free ferromagnetic layer. The pinned ferromagnetic layer is disposed on the nonmagnetic layer. The antiferromagnetic layer is disposed on the pinned ferromagnetic layer. The two electrically conductive reading lines are formed to be perpendicular to each other.

REFERENCES:
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patent: 7006375 (2006-02-01), Covington
E.B. Myers et al., SCIENCE, 285 : 867-870, 1999.
D. Chiba et al., SCIENCE, 301: 943-945, 2003.
Jeong-Won Lee et al., Applied Physics Letters, 82: 2458-2460, 2003.

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