Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2006-10-13
2009-06-30
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S230060
Reexamination Certificate
active
07554863
ABSTRACT:
A voltage control circuit of the present invention is applicable to a combination of a decoder circuit and a level conversion circuit connected to the decoder circuit. The voltage control circuit includes a level conversion circuit voltage line for applying a voltage to the level conversion circuit, and a boost voltage connection switch for switching a voltage applied to the level conversion circuit voltage line according to an output signal from the decoder circuit. This configuration makes it possible to prevent, when a boost voltage is applied to the level conversion circuit, the breakdown of transistors in the level conversion circuit due to a ripple in the boost voltage.
REFERENCES:
patent: 5282171 (1994-01-01), Tokami et al.
patent: 6111789 (2000-08-01), Choi et al.
patent: 6490189 (2002-12-01), Kang et al.
patent: 6535430 (2003-03-01), Ogura et al.
patent: 7184358 (2007-02-01), Kobayashi et al.
patent: 10-214495 (1998-08-01), None
patent: 2001-243786 (2001-09-01), None
patent: 2002-367388 (2002-12-01), None
Miyatake Shin-ichi
Tabuchi Motohiro
Elpida Memory Inc.
Ho Hoai V
Young & Thompson
LandOfFree
Voltage control circuit and semiconductor device having the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Voltage control circuit and semiconductor device having the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Voltage control circuit and semiconductor device having the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4134078