Voltage contrast monitor for integrated circuit defects

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With semiconductor element forming part

Reexamination Certificate

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Details

C257S678000

Reexamination Certificate

active

07323768

ABSTRACT:
A semiconductor chip is provided which includes active and inactive IP cores. The spaces on the metal layer associated with the inactive IP cores includes voltage contrast inspection structures. The voltage contrast inspection structures serve to provide improved planarization of the metal layer and provided improved inspection capabilities.

REFERENCES:
patent: 5514974 (1996-05-01), Bouldin
patent: 2002/0010887 (2002-01-01), Whetsel

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