Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2009-12-31
2011-10-18
Auduong, Gene N (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C365S189090
Reexamination Certificate
active
08040723
ABSTRACT:
A voltage compensation circuit, a multi-level memory device with the same, and a voltage compensation method for reading the multi-level memory device are provided. When a memory cell is read, a reference voltage applied to the memory device is adjusted according to variation of characteristics of a drift resistance of a reference cell. The increased value of the reference voltage (i.e. a voltage difference) corresponds to a resistance variation caused by a drift condition. The drift compensation mechanism is adaptive to a compensation circuit of a read driver of the memory device, which can compensate variation of the voltage level when data is read from the memory cell. When the resistance drift occurs, a drift amount is calculated and is added to the reference voltage, in order to avoid the error in judgement caused by the resistance drift when the stored data is read out.
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Chiang Pei-Chia
Lin Chih-He
Lin Wen-Pin
Sheu Shyh-Shyuan
Auduong Gene N
Industrial Technology Research Institute
Jianq Chyun IP Office
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