Voltage-clipping device with high breakdown voltage

Details Voltage-clipping device with high breakdown voltage Voltage-clipping device with high breakdown voltage

2006-06-15

2010-02-02

Nguyen, Thinh T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S403000, C257S404000

Reexamination Certificate

active

07655990

ABSTRACT:
The present invention proposes a voltage-clipping device utilizing a pinch-off mechanism formed by two depletion boundaries. A clipping voltage of the voltage-clipping device can be adjusted in response to a gate voltage; a gap of a quasi-linked well; and a doping concentration and a depth of the quasi-linked well and a well with complementary doping polarity to the quasi-linked well. The voltage-clipping device can be integrated within a semiconductor device as a voltage stepping down device in a tiny size, compared to traditional transformers.

REFERENCES:
patent: 6015999 (2000-01-01), Yu et al.
patent: 57-128979 (1982-08-01), None

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