Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-02
1999-01-05
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257339, 257342, 257368, 257403, H10L 21336, H10L 2706, H10L 2978
Patent
active
058566929
ABSTRACT:
An accumulation-mode power MOSFET includes a trenched gate that is formed in a semiconductor material of a first conductivity type. A region of second conductivity type is formed in the substrate (which may include an epitaxial layer) and a PN junction formed by the region of second conductivity type is connected in parallel with the current path through the accumulation-mode MOSFET. The diode is designed to have a breakdown voltage was causes the diode to break down before the oxide layer surrounding the gate can be ruptured or otherwise damaged when the MOSFET is in an off condition.
REFERENCES:
patent: 4903189 (1990-02-01), Ngo et al.
patent: 5430315 (1995-07-01), Rumennik
B.J. Baliga et al., "The Accumulation-Mode Field-Effect Transistor: A New Ultralow On-Resistance MOSFET", IEEE Electron Device Letters, vol. 13, No. 8, Aug. 1992, pp. 427-429.
T. Syau, "Comparison of Ultralow Specific On-Resistance UMOSFET Structures: The ACCUFET, EXTEET, INVFET, and Conventional UMOSFET's", IEEE Transactions on Electron Devices, vol. 41, No. 5, May 1994, pp. 800-808.
Mallikarjunaswamy Shekar S.
Williams Richard K.
Brown Peter Toby
Duong Hung Van
Siliconix incorporated
Steuber David E.
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