Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Patent
1994-11-08
1996-05-28
Callahan, Timothy P.
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
327535, 327390, G05F 302
Patent
active
055215467
ABSTRACT:
A voltage boosting circuit is constructed together with a semiconductor memory device on a common substrate in an integrated circuit. The voltage boosting circuit comprises a first oscillating circuit, a boosted voltage Vpp main pumping circuit driven by the first oscillating circuit, a transmission gate for supplying Vpp in response to the output of the Vpp main pumping circuit, and a well bias supplying circuit for supplying a given bias to an isolation well on the substrate in which well the transmission gate is formed. The transmission gate includes a field effect transistor switched in common-source-amplifier configuration, rather than in common-drain-amplifier configuration, which mode of switching avoids unwanted voltage offset attributable to source-follower action. In response to drive from a second oscillating circuit, the well bias supplying circuit supplies boosted bias voltage to the isolation well, which (in order to avoid an undesirable latch-up condition) begins before the main pumping circuit boosts the voltage Vpp supplied to the semiconductor memory device as operating potential.
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patent: 5408140 (1995-04-01), Kawai et al.
"A 35 ns 64 Mb Dram Using On-chip Boosted Power Supply", D. J. Lee et al, 1992 Symposium on VLSI Circuits Digest of Technical Papers, pp. 64-65.
Callahan Timothy P.
Englund Terry L.
Samsung Electronics Co,. Ltd.
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