Voltage booster and memory structure using the same

Details Voltage booster and memory structure using the same Voltage booster and memory structure using the same

2007-08-22

2010-06-22

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S226000, C365S227000, C365S229000, C365S230060, C365S189110, C365S185230

Reexamination Certificate

active

07742346

ABSTRACT:
A voltage booster and a memory structure using the same are provided. When a data storage unit in the memory structure is in normal operation, all voltage pumps in the voltage booster are turned on for boosting a supply voltage. However, when the data storage unit is in standby state, in the voltage booster, some voltage pumps are turned on while other voltage pumps are turned off, for boosting the supply voltage. Accordingly, the standby current and power consumption are reduced and the pump efficiency is improved.

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patent: 1467748 (2004-01-01), None
patent: 1945738 (2007-04-01), None
“1st Office Action of China counterpart application”, issued on May 22, 2009, p. 1-p. 6.
“Office Action of Taiwan counterpart application”, issued on Mar. 26, 2010, p. 1-p. 5.

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