Voltage biasing for magnetic ram with magnetic tunnel memory cel

Details Voltage biasing for magnetic ram with magnetic tunnel memory cel Voltage biasing for magnetic ram with magnetic tunnel memory cel

1997-12-02

1999-11-23

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365173, G11C 1114

Patent

active

059911930

ABSTRACT:
A nonvolatile memory array includes a substrate, a first plurality of electrically conductive traces formed on the substrate, a second plurality of electrically conductive traces formed on the substrate and overlapping the first plurality of traces at a plurality of intersection regions, and a plurality of memory cells formed on the substrate. Each memory cell is located at an intersection region between one of the first plurality of traces and one of the second plurality of traces and includes a bidirectionally conducting nonlinear resistance selection device and a magneto-resistive element electrically coupled in series with the selection device. The array is biased during a read operation by biasing a selected trace of a first plurality of electrically conductive traces at a first bias potential. All other traces of the first plurality of conductive traces are biased at a second bias potential. A selected trace of a second plurality of conductive traces is biased at a third bias potential. Lastly, all other traces of the second plurality of conductive traces are biased at the first bias potential.

REFERENCES:
patent: 5347485 (1994-09-01), Taguchi et al.
patent: 5361226 (1994-11-01), Taguchi et al.
patent: 5448515 (1995-09-01), Fukami et al.
patent: 5640343 (1997-06-01), Gallagher et al.

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