Volcano defect-free tungsten plug

Details Volcano defect-free tungsten plug Volcano defect-free tungsten plug

1996-04-29

1997-09-30

Niebling, John

Fishing, trapping, and vermin destroying

437190, 437200, H01L 2128

Patent

active

056725434

ABSTRACT:
A new method of metallization using a tungsten plug is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer covers the semiconductor device structures wherein a contact opening is made through the insulating layer to the semiconductor substrate. A barrier layer is deposited conformally over the surface of the insulating layer and within the contact opening. A stress buffer layer is deposited overlying the barrier layer wherein the stress buffer layer prevents volcano defects. A tungsten plug is formed within the contact opening to complete the formation of the tungsten plug metallization without volcano defects in the fabrication of an integrated circuit device.

REFERENCES:
patent: 5183782 (1993-02-01), Onishi et al.
patent: 5332691 (1994-07-01), Kinoshita et al.
patent: 5397742 (1995-03-01), Kim
patent: 5489552 (1996-02-01), Merchant et al.
patent: 5552339 (1996-09-01), Hsieh

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