Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2008-07-08
2008-07-08
Byrne, Harry W (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S185080, C365S228000
Reexamination Certificate
active
07397719
ABSTRACT:
A volatile semiconductor memory includes a self-test controller detecting a defect of a memory cell, and an address storage storing a defective address indicating an address of a defective memory cell, and a refresh adjust circuit setting a refresh cycle of a memory cell designated by the defective address to be shorter than a refresh cycle of a normal memory cell.
REFERENCES:
patent: 5818772 (1998-10-01), Kuge
patent: 6310807 (2001-10-01), Ooishi et al.
patent: 6728156 (2004-04-01), Kilmer et al.
patent: 2005/0281112 (2005-12-01), Ito et al.
patent: 11-238393 (1999-08-01), None
Matsubara Hiroyuki
Takahashi Hiroyuki
Byrne Harry W
NEC Electronics Corporation
Young & Thompson
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