Volatile memory cell two-pass writing method

Static information storage and retrieval – Read/write circuit

Reexamination Certificate

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C365S185180

Reexamination Certificate

active

07317641

ABSTRACT:
A method is set forth for writing volatile memory cells embodied on an integrated circuit and taking the form of an array of volatile memory cells including a plurality of word lines and a plurality of bit lines. In use, a first write operation is performed on at least one memory cell at a first time. Further, at a second time, a second write operation is performed on at least one memory cell. During use, various voltage relationships may be employed for enhanced programming. Just by way of example, a voltage at a corresponding word line associated with the at least one memory cell during the first write operation is different than that during the second write operation.

REFERENCES:
patent: 4574365 (1986-03-01), Scheuerlein
patent: 5268870 (1993-12-01), Harari
patent: 5474365 (1995-12-01), Von Linsingen-Heintzmann
patent: 5915167 (1999-06-01), Leedy
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6490218 (2002-12-01), Vyvoda et al.
patent: 6504753 (2003-01-01), Scheuerlein et al.
patent: 6522594 (2003-02-01), Scheuerlein
patent: 6559491 (2003-05-01), Forbes et al.
patent: 6618295 (2003-09-01), Scheuerlein
patent: 6631085 (2003-10-01), Kleveland et al.
patent: 6633509 (2003-10-01), Scheuerlein et al.
patent: 6661730 (2003-12-01), Scheuerlein et al.
patent: 6686624 (2004-02-01), Hsu
patent: 6735104 (2004-05-01), Scheuerlein
patent: 6754102 (2004-06-01), Kleveland et al.
patent: 6768685 (2004-07-01), Scheuerlein
patent: 6816410 (2004-11-01), Kleveland et al.
patent: 6822903 (2004-11-01), Scheuerlein et al.
patent: 6856572 (2005-02-01), Scheuerlein et al.
patent: 6859410 (2005-02-01), Scheuerlein et al.
patent: 7221588 (2007-05-01), Fasoli et al.
patent: 2002/0028541 (2002-03-01), Lee et al.
patent: 2002/0105057 (2002-08-01), Vyvoda et al.
patent: 2003/0081489 (2003-05-01), Scheuerlein et al.
patent: 2004/0007721 (2004-01-01), Forbes et al.
patent: 2004/0100831 (2004-05-01), Knall et al.
patent: 2004/0124415 (2004-07-01), Walker et al.
patent: 2004/0155317 (2004-08-01), Bhattacharyya
patent: 2004/0188714 (2004-09-01), Scheuerlein et al.
patent: 2004/0263238 (2004-12-01), Thorp et al.
patent: 2005/0047240 (2005-03-01), Ikehashi et al.
patent: 2005/0078537 (2005-04-01), So et al.
patent: WO 2004/061861 (2004-07-01), None
patent: WO 2004/061863 (2004-07-01), None
patent: WO 2004/090905 (2004-10-01), None
Ohsawa et al. “An 18.5ns 128 Mb SOI DRAM with a Floating Body Cell” Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International, Volume Feb. 9, 2005 pp. 458-695.
Ohsawa et al. “Memory design using one-transistor gain cell on SOI” Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International, vol. 1, Feb. 3-7, 2002 pp. 152-455 vol. l.
Ohsaki et al. “A Single Poly EEPROM Cell Structure for Use in Standard CMOS Processes” IEEE Journal of Solid-State Circuits, vol. 29, No. 3, Mar. 1994.
Co-pending application filed coincidently herewith, naming common inventorship, and entitled “Floating Body Memory Cell System and Method of Manufacture.”

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