Static information storage and retrieval – Read/write circuit
Reexamination Certificate
2008-01-08
2008-01-08
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Read/write circuit
C365S185180
Reexamination Certificate
active
07317641
ABSTRACT:
A method is set forth for writing volatile memory cells embodied on an integrated circuit and taking the form of an array of volatile memory cells including a plurality of word lines and a plurality of bit lines. In use, a first write operation is performed on at least one memory cell at a first time. Further, at a second time, a second write operation is performed on at least one memory cell. During use, various voltage relationships may be employed for enhanced programming. Just by way of example, a voltage at a corresponding word line associated with the at least one memory cell during the first write operation is different than that during the second write operation.
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Le Vu A.
SanDisk Corporation
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