Volatile liquid precursors for the chemical vapor deposition of

Details Volatile liquid precursors for the chemical vapor deposition of Volatile liquid precursors for the chemical vapor deposition of

1991-02-04

1992-02-04

Beck, Shrive

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156654, 156655, 156656, 156666, 427250, 427252, 427253, 4272551, C23C 1614, B44C 122, C03C 1500

Patent

active

050857312

ABSTRACT:
Volatile liquid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. These organometallic copper complexes are represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H, F or C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.4 is H, C.sub.1 -C.sub.8 alkyl, or Si(R.sup.6).sub.3, each R.sup.5 is independently H or C.sub.1 --C.sub.8 alkyl and each R.sup.6 is independently phenyl or C.sub.1 -C.sub.8 alkyl. A process for depositing copper films using these organometallic copper complexes is also provided.

REFERENCES:
patent: 2704727 (1955-03-01), Pawlyk
patent: 2704728 (1955-03-01), Pawlyk
patent: 4842891 (1989-06-01), Miyazaki et al.
patent: 4948623 (1990-08-01), Beach et al.

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