Void free oxide fill for interconnect spaces

Details Void free oxide fill for interconnect spaces Void free oxide fill for interconnect spaces

1992-07-31

1995-01-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437978, H01L 21316, H01L 21443, H01L 21467

Patent

active

053825470

ABSTRACT:
An improved interconnect space filling process which provides voidless space filling for aspect ratio .ltoreq.1.88 by adding one step to the prior art process to change the aspect ratio of the space to be within specification aspect ratios for the older process. The added step is to apply a highly viscous single spin of SOG after applying a thin CVD PETEOS layer overtop the metallization.

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Muraka, Electronic Materials, Science and Technology, pp. 329-332 (Date Unknown).
Wolf, "Silicon Processing for the VLSI Era, vol. II: Process Integration" pp. 222-235, 1990.

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