Void characterization in metal interconnect structures using...

Details Void characterization in metal interconnect structures using... Void characterization in metal interconnect structures using...

2005-08-02

2005-08-02

Wells, Nikita (Department: 2881)

Radiant energy

Inspection of solids or liquids by charged particles

Electron probe type

C250S492200, C250S306000, C250S307000

Reexamination Certificate

active

06924484

ABSTRACT:
Disclosed are methods and apparatus for characterizing a potential void or voids by analyzing the X-ray count of one or more emitted X-ray species as emitted from an interconnect structure under test in response to a impinging beam, such as an electron beam, directed towards the sample surface. For example, this analysis may be used to determine whether the structure (e.g., a contact, line or via) has one or more void(s). It may also he used to help determine where the void(s) are with respect to the interconnect structure. It may also be used to help determine other characteristics of the void(s) with respect to the interconnect structure such as the shape(s) and size(s) of the void(s). The analysis may also be used to help initially determine whether the structure under test is so out of specification that it cannot then be determined whether the structure has a defect of a particular type. This analysis can be used to evaluate the process variation of wafers.

REFERENCES:
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patent: 5900645 (1999-05-01), Yamada
patent: 6351516 (2002-02-01), Mazor et al.
Amekura, Hiroshi et al.,X-Ray Emission Induced by 60 keV High-Flux Copper Negative-Ion Implantation,Feb. 2001, Japan Society of Applied Physics.
Shaw, Judy B. et al.,Voids, Pits, and Copper,Winter 2002, Yield Management Solutions: Cu/low Special Focus.
Testoni, A.L.,CuVA: Analyzing Voids in Cu Interconnects,Jun. 20, 2002, KLA-Tencor Progress Report.

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