Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-06-07
2011-06-07
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S760000, C257SE23144
Reexamination Certificate
active
07956439
ABSTRACT:
Void boundary structures, semiconductor devices having the void boundary structures, and methods of forming the same are provided. The structures, semiconductor devices and methods present a way for reducing parasitic capacitance between interconnections by forming a void between the interconnections. The interconnections may be formed on a semiconductor substrate. An upper width of each of the interconnections may be wider than a lower width thereof. A molding layer encompassing the interconnections may be formed. A void boundary layer covering the molding layer may be formed to define the void between the interconnections.
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Lee Kyung-Tae
Yu Cheong-Sik
Harness & Dickey & Pierce P.L.C.
Kim Sun M
Landau Matthew C
Samsung Electronics Co,. Ltd.
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