VLSI ROM programmed by selective diode formation

Details VLSI ROM programmed by selective diode formation VLSI ROM programmed by selective diode formation

1996-04-25

1997-04-01

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257391, 257910, H01L 27112

Patent

active

056169469

ABSTRACT:
A method for fabricating read only memory, (ROM), devices, has been developed. The programmable cell of this ROM device is comprised of a P/N diode, place in a N+ buried bit line. The diode formation is accomplished using outdiffusion from a P+ polysilicon wordline, that is in direct contact to a specific bit line region.

REFERENCES:
patent: 5108937 (1992-04-01), Tsai et al.
patent: 5236853 (1993-08-01), Hsue
patent: 5264386 (1993-11-01), Yang
patent: 5308777 (1994-05-01), Hong
patent: 5308781 (1994-05-01), Ando et al.
patent: 5334543 (1994-08-01), Lin et al.
patent: 5429975 (1995-07-01), Sheu et al.

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