VLSI memory circuit

Details VLSI memory circuit VLSI memory circuit

1997-09-11

1999-02-09

Nelms, David

Static information storage and retrieval

Powering

365203, 365 94, 365104, G11C 700, G11C 1700

Patent

active

058703462

ABSTRACT:
A memory precharge voltage, VPC, is provided which tracks changes in the high voltage supply, VDD, according to a measured degree, which maintains a precharge voltage notwithstanding transient loads which may tend to draw the precharge voltage down, and which maintains the precharge voltage at the operating level notwithstanding the fact that the precharge generator is substantially turned off during a power down condition. The precharge voltage, VPC, is then used as the controlling input signal to a circuit which it generates and an internal control voltage, MLC, used to drive small pull-up current FETs coupled to the bit lines in the ROM core. The internal control signal MLC is generated to track the discharge current in a bit line within the memory core, to track VPC, and to be maintained at its operating voltage level even when the MLC current is substantially turned off during a power down condition.

REFERENCES:
patent: 5467300 (1995-11-01), Komarek et al.
patent: 5608687 (1997-03-01), Komarek et al.
patent: 5732035 (1998-03-01), Komarek et al.

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