Visibility enhancement of first order alignment marks

Details Visibility enhancement of first order alignment marks Visibility enhancement of first order alignment marks

1985-08-19

1986-12-30

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156648, 156651, 156653, 156657, 1566591, 1566611, 156662, 156668, 20419232, 427 38, 427 431, 430313, 430317, H01L 21306, B44C 122, C03C 1500, B29C 1708

Patent

active

046327240

ABSTRACT:
A method of enhancing first order alignment marks formed in the respective layers of a processed semiconductor wafer in which critical masking steps are carried out. After a given mark is formed, it is tested for visual contrast. If the contrast is insufficient to provide adequate alignment, a block mask is formed on the critical mask. The block mask exposes all of the alignment target areas and protects the product regions of the wafer, and the critical mask only exposes the mark to be enhanced. The mark is then etched for a time period which is a function of the measured visual contrast. This method of selectively enhancing selected ones of the first order alignment marks greatly enhances the utility of such marks, increasing the accuracy of critical masking steps.

REFERENCES:
patent: 4125418 (1978-11-01), Vinton
patent: 4233091 (1980-11-01), Kawabe
patent: 4374915 (1983-02-01), Ahlquist et al.
patent: 4487653 (1984-12-01), Hatcher
patent: 4575399 (1986-03-01), Tanaka et al.
Protschka et al, "E-Beam Alignment Masks for Processing FET Planar Si Structures", IBM Technical Disclosure Bulletin, vol. 19, No. 11, Apr. 1977, pp. 4244-4245.
Helmeyer et al, "E-Beam Registration Mark Enhancement by Pyrocatechol Etch", IBM Technical Disclosure Bulletin, vol. 24, No. 9, Feb. 1982, pp. 4731-4732.
Frederick et al, "Process to Define E-Beam Registration Marks", IBM Technical Disclosure Bulletin, vol. 25, No. 9, Feb. 1983, pp. 4759.

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