Virtually nonvolatile static random access memory device

Details Virtually nonvolatile static random access memory device Virtually nonvolatile static random access memory device

1976-11-05

1978-01-24

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Flip-flop

340173R, 365181, 365154, 365184, G11C 1140

Patent

active

040706559

ABSTRACT:
A high density, static, virtually nonvolatile, Random Access Memory (RAM) cell is disclosed in which variable threshold n-channel depletion mode Metal-Nitride-Oxide-Semiconductor (MNOS) transistors are the load devices for a pair of active, n-channel, enhancement mode, Insulated Gate Field Effect Transistors (IGFETs) in a flip-flop circuit. N-channel enhancement mode access transistors also IGFETs connect the cell to the bit line and the bit line. Information is written in, and read, in volatile form conventionally. A +25 volt, 10 msec pulse applied to the gates of the depletion mode MNOS load devices transfers the data from the volatile mode to the nonvolatile mode.

REFERENCES:
patent: 3831155 (1974-08-01), Tamaru

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