Virtual semiconductor nanowire, and methods of using same

Details Virtual semiconductor nanowire, and methods of using same Virtual semiconductor nanowire, and methods of using same

2011-08-30

2011-08-30

Sines, Brian J (Department: 1772)

Chemical apparatus and process disinfecting, deodorizing, preser

Analyzer, structured indicator, or manipulative laboratory...

Means for analyzing liquid or solid sample

C438S048000, C438S049000, C438S197000, C438S199000, C438S154000, C438S290000, C438S285000, C422S050000, C422S068100, C422S083000, C422S098000, C422S082020

Reexamination Certificate

active

08007727

ABSTRACT:
A multiple-gate field-effect transistor includes a fluid in a top gate, two lateral gates, and a bottom gate. The multiple-gate field-effect transistor also includes a patterned depletion zone and a virtual depletion zone that has a lesser width than the patterned depletion zone. The virtual depletion zone width creates a virtual semiconductor nanowire that is lesser in width than the patterned depletion zone.

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