Virtual hard mask for etching

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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Details

430328, 427523, 438766, G03F 726

Patent

active

058769030

ABSTRACT:
A method of hardening photoresist (24) by bombardment with ionized particles (42), such as argon. Ionic bombardment causes formation of a hardened skin (22) on the exposed top (30) and side walls (32) of the photoresist (24). The hardened skin erodes at a reduced rate during etching and is less likely to react with products created during etching, thereby allowing etching of more accurate line widths and gaps.

REFERENCES:
patent: 4068018 (1978-01-01), Hashimoto

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