Virtual ground single transistor memory cell, memory array...

Details Virtual ground single transistor memory cell, memory array... Virtual ground single transistor memory cell, memory array...

2005-03-29

2005-03-29

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29300, C257S006000, C438S266000, C438S286000, C438S302000, C438S525000

Reexamination Certificate

active

06873004

ABSTRACT:
An asymmetrical virtual ground single transistor floating gate memory cell has a floating gate that overlies a channel region in a p-well, the channel region lying between a heavily doped n+ drain region and a lightly doped n− source region. A heavily doped p+ region known as a “halo” is disposed in the channel adjacent the heavily doped n+ drain. The floating gate is spaced away from the channel region by a generally thin tunnel oxide. A lightly doped source with a graded source/channel junction reduces source side CHE generation. In one variation, a thicker oxide between the source and the floating gate reduces CHE injection from the source side. A heavily doped drain with a halo implant in the channel adjacent the drain enhances drain side CHE generation.

REFERENCES:
patent: 5060195 (1991-10-01), Gill et al.
patent: 5418741 (1995-05-01), Gill
patent: 5646886 (1997-07-01), Brahmbhatt
patent: 5959892 (1999-09-01), Lin et al.
patent: 6130134 (2000-10-01), Chen
patent: 6175519 (2001-01-01), Lu et al.

Affiliated with

Also associated with

Rating

Virtual ground single transistor memory cell, memory array... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Virtual ground single transistor memory cell, memory array..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Virtual ground single transistor memory cell, memory array... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3368772