Virtual ground read only memory circuit

Details Virtual ground read only memory circuit Virtual ground read only memory circuit

1992-11-30

1994-12-27

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Differential sensing

365 51, 36518907, G11C 700, G11C 1100

Patent

active

053771532

ABSTRACT:
A semiconductor read only memory device includes memory cells arranged in a matrix of rows and columns; word lines crossing the matrix, wherein one word line is connected to each row of memory cells; and bit lines interdigitated with column lines and positioned such that each column of memory cells is between a bit line and a column line. The matrix is subdivided into cells, where each cell has four memory cells arranged symmetrically about a bit line in two rows and two columns. All four of the cells are connected to the bit line at a common electrical node, wherein selected cells are connected to a column line. The memory device also includes a row select driver for selecting memory cells in a single row; a column select driver for selecting a single column line; and circuitry for selecting one of the bit lines adjacent to a column line.

REFERENCES:
patent: 4758989 (1988-07-01), Davis et al.
patent: 4899309 (1990-02-01), Kitazawa et al.

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