Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-08-26
1997-04-22
Yoo, Do Hyun
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
363 63, 363 51, G11C 700, H01L 218246
Patent
active
056234384
ABSTRACT:
A semiconductor read only memory device includes memory cells arranged in a matrix of rows and columns; word lines crossing the matrix, wherein one word line is connected to each row of memory cells; and bit lines interdigitated with column lines and positioned such that each column of memory cells is between a bit line and a column line. The matrix is subdivided into cells, where each cell has four memory cells arranged symmetrically about a bit line in two rows and two columns. All four of the cells are connected to the bit line at a common electrical node, wherein selected cells are connected to a column line. The memory device also includes a row select driver for selecting memory cells in a single row; a column select driver for selecting a single column line; and circuitry for selecting one of the bit lines adjacent to a column line.
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Betty Prince, "Semiconductor Memories", 1991, pp. 507-516.
Chan Tsiu C.
Guritz Elmer H.
Galanthay Theodore E.
Hill Kenneth C.
Jorgenson Lisa K.
SGS-Thomson Microelectronics Inc.
Yoo Do Hyun
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