Virtual ground memory cell array

Details Virtual ground memory cell array Virtual ground memory cell array

1994-01-06

1995-05-23

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Semiconductive

365185, 257335, 257314, 437 43, H01L 2968, H01L 2978

Patent

active

054187419

ABSTRACT:
A memory cell array for a nonvolatile memory device having single-transistor cells (10). Row lines (15) connect the control gates of each row of cells. Column lines (17) connect the drain regions (11) and source regions (12) of columns of cells, such that pairs of row-adjacent cells share a column line (17). Each shared column line (17) has two junctions for each pair of cells that share the column line. One junction is graded for source regions (12) and the other is abrupt for drain regions (11).

REFERENCES:
patent: 4780424 (1988-10-01), Holler et al.
patent: 4996571 (1991-02-01), Kume et al.
patent: 5051796 (1991-09-01), Gill
patent: 5077230 (1991-12-01), Woo et al.
patent: 5102814 (1992-04-01), Woo
patent: 5215934 (1993-06-01), Tzeng

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