Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-10-30
2007-10-30
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S057000, C257S066000, C257S368000, C257SE21207, C257SE31049
Reexamination Certificate
active
11161213
ABSTRACT:
A field effect transistor (FET) and method of forming the FET comprises a substrate; a silicon germanium (SiGe) layer over the substrate; a semiconductor layer over and adjacent to the SiGe layer; an insulating layer adjacent to the substrate, the SiGe layer, and the semiconductor layer; a pair of first gate structures adjacent to the insulating layer; and a second gate structure over the insulating layer. Preferably, the insulating layer is adjacent to a side surface of the SiGe layer and an upper surface of the semiconductor layer, a lower surface of the semiconductor layer, and a side surface of the semiconductor layer. Preferably, the SiGe layer comprises carbon. Preferably, the pair of first gate structures are substantially transverse to the second gate structure. Additionally, the pair of first gate structures are preferably encapsulated by the insulating layer.
REFERENCES:
patent: 4946799 (1990-08-01), Blake et al.
patent: 5289027 (1994-02-01), Terrill et al.
patent: 5627395 (1997-05-01), Witek et al.
patent: 5929490 (1999-07-01), Onishi
patent: 5963817 (1999-10-01), Chu et al.
patent: 6111778 (2000-08-01), MacDonald et al.
patent: 6391752 (2002-05-01), Colinge et al.
patent: 6407427 (2002-06-01), Oh
patent: 6437405 (2002-08-01), Kim
patent: 6583469 (2003-06-01), Fried et al.
patent: 6657258 (2003-12-01), Bae
patent: 6716684 (2004-04-01), Krivokapic et al.
patent: 6759282 (2004-07-01), Campbell et al.
patent: 6759710 (2004-07-01), Chan et al.
patent: 6762483 (2004-07-01), Krivokapic et al.
patent: 6774437 (2004-08-01), Bryant et al.
patent: 6787404 (2004-09-01), Lee et al.
patent: 6800513 (2004-10-01), Horiuchi et al.
patent: 2001/0052613 (2001-12-01), Higashi et al.
patent: 2003/0052347 (2003-03-01), Fung
patent: 2005/0189589 (2005-09-01), Zhu et al.
patent: 2006/0043616 (2006-03-01), Anderson et al.
Anderson Brent A.
Breitwisch Matthew J.
Nowak Edward J.
Rainey BethAnn
Gibb & Rahman, LLC
International Business Machines - Corporation
Purvis Sue A.
Sabo, Esq. William D.
Wilson Scott R.
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