Vialess shorting bars for magnetoresistive devices

Details Vialess shorting bars for magnetoresistive devices Vialess shorting bars for magnetoresistive devices

1987-01-28

1988-06-28

Moffitt, James W.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365173, G11C 1115

Patent

active

047544317

ABSTRACT:
A magnetic solid state device, such as a magnetoresistive memory cell, includes first and second layers of magnetoresistive material. The first and second layers are separated by a third layer which prevents exchange coupling between the magnetic dipoles of the first and second layers. The first, second and third layers are formed as a strip. A fourth layer of a resistive material, such as nitrogen doped tantalum, overlies the first layer. The fourth layer includes spaced, raised portions over which electrically conductive material, such as TiW, may be formed on top of the raised portions.

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