Via with barrier layer for impeding diffusion of conductive mate

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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Details

427 98, 438643, 438653, B05D 512, H01L 214763

Patent

active

060014156

ABSTRACT:
A via structure includes a barrier layer disposed between a via plug and an insulating layer surrounding a via hole to impede diffusion of conductive material from the via plug into the insulating layer. The barrier layer is deposited to cover the via side wall after the via hole is formed. The via hole is then filled with a via plug comprised of a conductive material such as copper that is amenable for fine line metallization with submicron and nanometer dimensions. The diffusion rate of copper through the barrier layer is significantly slower than the diffusion rate of copper through the insulating layer surrounding the via hole. With such an impedance of copper diffusion into the insulating layer, the insulating integrity of the insulating layer is preserved.

REFERENCES:
patent: 4894260 (1990-01-01), Kumasaka et al.
patent: 5486492 (1996-01-01), Yamamoto et al.
patent: 5660706 (1997-08-01), Zhao et al.
patent: 5674787 (1997-10-01), Zhao et al.

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