Via plug formation in dual damascene process

Details Via plug formation in dual damascene process Via plug formation in dual damascene process

2006-02-13

2008-11-18

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

73, C257SE21226, C257SE21252, C257SE21257

Reexamination Certificate

active

07452822

ABSTRACT:
A method for forming a dual damascene structure in a semiconductor device manufacturing process where via plugs which may include a thickness portion of a plug filling material overlying the process surface is formed by diffusing an acid into a plug filling material layer followed by reacting the acid with the plug filling material layer to form a soluble portion which is then removed using a solvent. A remaining portion of the plug filling material is cured and a BARC layer may be formed over the process surface prior to patterning trenches in an overlying resist layer and forming a dual damascene structure.

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patent: 2006/0110941 (2006-05-01), Yen et al.
patent: 2006/0211254 (2006-09-01), Liu et al.

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