Via including multiple electrical paths

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S396000, C438S106000, C438S612000, C438S629000, C438S668000, C438S638000, C438S639000, C438S640000, C257S750000, C257S774000, C257SE23067

Reexamination Certificate

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07737025

ABSTRACT:
A method for forming an plurality of paths on a substrate includes drilling an opening for a via to a depth to expose a first pad and a second pad, lining the opening with a conductive material, and insulating a first portion of the lining in the opening from a second portion of the lining in the opening to form a first electrical path contacting the first pad and a second electrical path contacting the second pad.

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patent: 6838774 (2005-01-01), Patti
patent: 2005/0067679 (2005-03-01), Leong et al.
patent: 2005/0133918 (2005-06-01), Myers et al.
patent: 2005/0252683 (2005-11-01), Hsu
patent: 2006/0081396 (2006-04-01), Hsu

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