Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-25
1999-02-23
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438754, 438701, 438673, H01L 21302
Patent
active
058743588
ABSTRACT:
A novel high performance and reliable interconnection structure for preventing via delamination. The interconnection structure of the present invention comprises a via connection which extends into and undercuts an underlying interconnection line to lock the via connection into the interconnection line.
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Bai Peng
Charvat Peter K.
Letson Thomas A.
Myers Alan M.
Yang Shi-ning
Everhart Caridad
Intel Corporation
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