Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-12
2009-11-17
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21578, C438S672000, C438S673000, C438S674000, C438S675000, C438S676000
Reexamination Certificate
active
07618892
ABSTRACT:
A method of forming a via hole reaching a bonding pad in a wafer having an insulating film constituting a plurality of devices on the front surface of a substrate and bonding pads on each of the devices by applying a pulse laser beam to the rear surface of the substrate, the method comprising the steps of:forming a non-through hole reaching the insulating film formed on the substrate by applying a pulse laser beam to the rear surface of the substrate;forming an insulating film on the inner wall of the hole which is formed in the substrate by the first step; andforming a via hole reaching a bonding pad by applying a pulse laser beam to the hole having the insulating film which is formed on the inner wall by the insulating film forming step.
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Disco Corporation
Sarkar Asok K
Smith , Gambrell & Russell, LLP
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