Via hole and trench structures and fabrication methods...

Details Via hole and trench structures and fabrication methods... Via hole and trench structures and fabrication methods...

2007-05-15

2007-05-15

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S702000, C438S703000, C438S709000, C438S761000, C438S778000

Reexamination Certificate

active

11039043

ABSTRACT:
Via hole and trench structures and fabrication methods are disclosed. The structure comprises a conductive layer in a dielectric layer, and a via hole in the dielectric layer for exposing a portion of a surface of the conductive layer. A conductive liner covers the exposed surface of the first conductive layer. A trench is formed on the via hole in the dielectric without the conductive liner layer in the trench. Dual damascene structures and fabrications methods are also disclosed. Following the fabrication methods of the via hole and trench structures, a conductive layer is further formed in the via hole and trench structures.

REFERENCES:
patent: 2001/0002333 (2001-05-01), Huang et al.
patent: 2003/0207564 (2003-11-01), Ahn et al.
patent: 2004/0175921 (2004-09-01), Cowley et al.
patent: 2004/0224497 (2004-11-01), Barth
patent: 2005/0124164 (2005-06-01), Sakata et al.
patent: 2005/0153505 (2005-07-01), Gambino et al.
patent: 2005/0167780 (2005-08-01), Edelstein et al.

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