Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-04-18
2006-04-18
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07030007
ABSTRACT:
A via-filling material includes a polymer containing a repeating unit represented bywherein R1one of hydrogen, fluorine, chlorine, bromine, and methyl group; R2is one of hydrogen, a C1-3alkyl group, and a C1-4alkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is —C(═O)O— or —S(═O)2O—. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.
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Ishibashi Takeo
Kumada Teruhiko
Nobutoki Hideharu
Ono Yoshiharu
Sakai Junjiro
Dolan Jennifer M.
Leydig , Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
Schillinger Laura M.
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