Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2005-09-13
2005-09-13
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S774000, C257S773000, C257S737000, C257S738000, C257S734000, C257S778000, C257S724000, C257S725000, C257S691000, C257S698000, C257S207000, C257S208000, C257S211000
Reexamination Certificate
active
06943446
ABSTRACT:
An integrated circuit having electrically conductive vias with a diameter of between about one micron and about fifty microns. Prior art vias have a diameter of between no less than 0.3 microns to no more than 0.8 microns. In this manner, stresses such as those that press down upon the top surface of the integrated circuit can be absorbed by the large vias and transferred past fragile layers, such as low k layers, so that the fragile layers are not damaged by the stresses.
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Barber Ivor G.
McCormick John P.
Nagarajan Kumar
LSI Logic Corporation
Luedeka Neely & Graham P.C.
Williams Alexander Oscar
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